? 20v/6.0a rds(on)=40m. (typ.) @ vgs=4.5v,id=6a rds(on)=45m.(typ.) @ vgs=2.5v,id=5.2a ?? ?? ? super high dense cell design for extremely low r ds(on) ?? ?? ? reliable and rugged ?? ?? ? sop-8 package NK9410 nanker symbol parameter rating unit v dss drain-source voltage 20 v gss gate-source vol tage 8 v i d * maximum drain current ? continuous 6 i dm maximum drain current ? pulsed 20 a * sur face mounted on fr4 board, t 10 sec. absolute maximum ratings (t a ?25??unless otherwise noted) NK9410 symbol parameter test condition min. typ. max. unit static bv dss drain-source breakdown voltage v gs =0v , i d =250 a 16 v i dss zero gate voltage drain current v ds =12v , v gs =0v 1 a v gs(th) gate threshold voltage v ds =v gs , i ds =250 a 0.4 1.3 v i gss gate leakage current v gs = 8v , v ds =0v 100 na v gs =4.5v , i ds =6 a 40 50 r ds(on) v gs =2.5v , i ds =5.2a 45 55 m? v sd diode forward voltage i sd =1.5a , v gs =0v 1.2 v "
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(t a = 25c unless otherwise noted) drain-source on-state resistance top view of sop-8 1234 8765 s s s g dddd power management in notebook computer portable equipment and battery powered systems. www..net
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